Live Astrum Swift Webinar
Ensuring Reliable Ultra-Trace Impurity Analysis in High-Purity Tellurium for Semiconductor Applications using Astrum Swift GD-MS
29 October 2026 - 29 October 2026
03:00 PM - 04:00 PM GMT
Online
High-purity tellurium is essential for advanced semiconductor and photovoltaic technologies. As impurity requirements tighten and purity levels of 5N to 7N become increasingly important, the ability to accurately characterize ultra-trace elemental contaminants is essential for material development, supplier evaluation, and process optimization.
The analysis of high-purity tellurium presents unique challenges due to its volatility and susceptibility to spectral interferences, which can compromise analytical stability, sensitivity, and accuracy. This webinar will demonstrate how the Astrum Swift GD-MS addresses these challenges through an analytical approach specifically developed for volatile materials, including the effective suppression of polyatomic interferences using cryogenic cooling.
Attendees will learn how a dedicated analytical approach enables the direct determination of ultra-trace impurities in high-purity tellurium, providing simultaneous quantification of 77 elements in a high-purity tellurium sample, with excellent precision. This work provides, for the first time, a dedicated GD-MS analytical methodology specially designed for volatile materials, representing a significant advancement in ultra-trace elemental analysis for semiconductor-grade tellurium.
Key takeaways
Analytical challenges associated with volatile materials
The role of cryogenic cooling in reducing spectral interferences
Real-world results for comprehensive elemental characterization of semiconductor-grade tellurium
Attendees will learn how a dedicated analytical approach enables the direct determination of ultra-trace impurities in high-purity tellurium, providing simultaneous quantification of 77 elements in a high-purity tellurium sample, with excellent precision. This work provides, for the first time, a dedicated GD-MS analytical methodology specially designed for volatile materials, representing a significant advancement in ultra-trace elemental analysis for semiconductor-grade tellurium.
Key takeaways
Analytical challenges associated with volatile materials
The role of cryogenic cooling in reducing spectral interferences
Real-world results for comprehensive elemental characterization of semiconductor-grade tellurium